STW21N150K5

N沟道1500 V、0.7 Ohm典型值、14 A MDmesh K5功率MOSFET，TO-247封装; • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.\n\n

STW21N150K5

丝印：21N150K5；Package：TO-247；N-channel 1500 V, 0.7 廓 typ.,14 A MDmesh??K5 Power MOSFET in a TO-247 package