N-channel 650 V @Tjmax, 0.53 廓, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH??Power MOSFET

文件：841.76 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET

文件：522.929 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

文件：267.99 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 950V - 0.69廓 - 10A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

文件：312.69 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.65 Ohm、10.5 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-247封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• Improved esd capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitances \n• Very good manufacturing reliability;

ST

意法半导体

N沟道900 V、0.72 Ohm典型值、11 A SuperMESH功率MOSFET，TO-247封装

This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Very good manufacturing repeatability;

ST

意法半导体

N-CHANNEL 950V - 0.72 Ohm - 10A - TO-247 Zener-Protected SuperMESH™ Power MOSFET

• Gate charge minimized\n• Extremely high dv/dt capability• 100% avalanche tested;

ST

意法半导体