首页 >STV8179F其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TVVERTICALDEFLECTIONBOOSTER DESCRIPTION DesignedformonitorsandhighperformanceTVs,theTDA8179FSverticaldeflectionboosterisabletoworkwithaflybackvoltagemorethanthedoubleofVS. TheTDA8179FSoperateswithsuppliesupto42V,flybackoutputupto92Vandprovidesupto2Appoutputcurrenttodriveto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
TVVERTICALDEFLECTIONBOOSTER ■POWERAMPLIFIER ■FLYBACKSUPPLYVOLTAGESEPARATED ■THERMALPROTECTION DESCRIPTION DesignedformonitorsandhighperformanceTVs, theTDA8179FSverticaldeflectionboosterisable toworkwithaflybackvoltagemorethanthedouble ofVs. TheTDA8179FSoperateswithsuppliesupto42 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
TVVERTICALDEFLECTIONBOOSTER DESCRIPTION DesignedformonitorsandhighperformanceTVs,theTDA8179Sverticaldeflectionboosterdeliversflybackvoltagesupto90V. TheTDA8179Soperateswithsuppliesupto42Vandprovidesupto2Appoutputcurrenttodrivetoyoke. TheTDA8179SisofferedinHEPTAWATTpackage. ■POWER | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONRFICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:PO(1dB)=+3.0dBmTYP.@f=1.0GHz PO(1dB)=+1.5dBmTYP.@f=1.9GHz PO(1dB)=+1.0dBmTYP.@f=2.4GHz •Powergain:GP=13.5dBTYP.@f=1.0GH | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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