Super high dense cell design for low RDS(ON).

文件：125.07 Kbytes 页数：10 Pages

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

Samhop

三合微科

100V N-Channel DTMOS

文件：791.93 Kbytes 页数：7 Pages

WUMC

紫光国微

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件：136.17 Kbytes 页数：3 Pages

UTC

友顺

N-Channel MOSFET uses advanced trench technology

文件：1.20165 Mbytes 页数：4 Pages

DOINGTER

杜因特