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STU8NM60ND中文资料PDF规格书
STU8NM60ND规格书详情
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
Features
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
产品属性
- 型号：
STU8NM60ND
- 功能描述：
MOSFET N-CH 6V 7A FDMESH FDMesh
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST-意法半导体 |
24+25+/26+27+ |
TO-251-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST/意法 |
22+ |
IPAK |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
STM |
2020+ |
TO-251 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST/意法 |
TO-251 |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
STMicroelectronics |
22+ |
TO251 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
ST/意法半导体 |
21+ |
TO-251-3 |
28680 |
公司只做原装,诚信经营 |
询价 | ||
STM原厂目录 |
23+ |
IPAK |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
STMicroelectronics |
TO251 |
10265 |
提供BOM表配单只做原装货值得信赖 |
询价 | |||
STMicroelectronics |
21+ |
TO251 |
3240 |
原装现货假一赔十 |
询价 | ||
ST |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
询价 |
