N-channel 650 V, 0.91 typ., 5 A, MDmeshTM M6 Power MOSFET in an IPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N-channel 650 V, 0.91 Ohm typ., 5 A MDmesh M6 Power MOSFET in an IPAK package

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses\n• Lower RDS(on) per area vs previous generation\n• Low gate input resistance• 100% avalanche tested\n• Zener-protected;

ST

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Compact 27W USB Type-C??Power Delivery 3.0 with PPS adapter reference design

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N-channel 650 V, 0.91 typ., 5 A, MDmeshTM M6 Power MOSFET in a TO‑220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmeshTM M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family o

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