N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in an IPAK package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technologybased on an innovative proprietary vertical structure. The result is a dramaticreduction in on-resistance and ultra-low gate charge for applications requiring superiorpower density and high efficiency. \n • Industry’s lowest RDS(on) x area\n• Industry’s best FoM (figure of merit)\n• Ultra-low gate charge• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：904.44 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：820.1 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：313.26 Kbytes 页数：2 Pages

ISC

无锡固电