Tandem 600 V hyperfast boost diode

文件：88.9 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Tandem 600V HYPERFAST BOOST DIODE

文件：68.59 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Tandem 600V HYPERFAST BOOST DIODE

文件：68.59 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Tandem 600 V hyperfast boost diode

文件：88.9 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

8.0A GLASS PASSIVATED ULTRAFAST DIODE

文件：87.13 Kbytes 页数：2 Pages

ZSELEC

淄博圣诺

600 V、8 A 2引线串联超高速升压二极管

The TURBOSWITCH \\\"H\\\" is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH \\\"H\\\" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. • Package Capacitance: C = 7 pF \n• Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions \n• Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes \n• Designed for high di/dt operation. Hyperfast recovery current t;

ST

意法半导体

600 V、8 A 3引线串联超高速升压二极管

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. • INSULATED VERSION: Insulated voltage = 2500 V(RMS)Capacitance = 7 pF\t \n• ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS. \n• ULTRA-FAST RECOVERY CURRENT TO COMPETE WITH GaAs DEVICES. SIZE DIMINUTION OF MOSFET AND HEATSINKS ALLOWED. \n• D;

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意法半导体

Package：TO-220-2 绝缘，TO-220AC；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 8A TO220AC

STMICROELECTRONICS

意法半导体

Package：TO-220-2 绝缘，TO-220AC；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 8A TO220AC

STMICROELECTRONICS

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 8A D2PAK

STMICROELECTRONICS

意法半导体