汽车级200 V、8 A PSMC超高速二极管

The STTH802SFY ultrafast recovery diode has been designed for automotive applications.\n\n Packaged in PSMC (TO-277A), this device provides a high level of performance in a compact and flat package which can withstand high operating junction temperature. • AEC-Q101 qualified \n• Very low conduction losses \n• Negligible switching losses \n• 175 °C maximum junction temperature \n• VRRM guaranteed from -40 °C to 175 °C \n• Wettable flanks for automatic visual inspection \n• PPAP capable \n• ECOPACK®2 compliant component;

ST

意法半导体

Automotive 200 V ultrafast recovery diode

Features • AEC-Q101 qualified • Very low conduction losses • Negligible switching losses • 175 °C maximum junction temperature • VRRM guaranteed from -40 °C to 175 °C • Wettable flanks for automatic visual inspection • PPAP capable • ECOPACK®2 compliant component Description The STTH80

文件：497.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Package：TO-277，3-PowerDFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：AUTOMOTIVE 200V ULTRAFAST RECOVE

STMICROELECTRONICS

意法半导体

Automotive ultrafast recovery diode

文件：105.46 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced SGT technology

文件：1.49722 Mbytes 页数：4 Pages

DOINGTER

杜因特

Super high dense cell design for low RDS(ON).

文件：128.96 Kbytes 页数：8 Pages

SAMHOP

三合微科