Very low conduction and switching losses

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. These

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STMICROELECTRONICS

意法半导体

汽车级1000 V、60 A超高速二极管

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications.\n\n These diodes also • AEC-Q101 qualified \n• Ultrafast, soft recovery \n• Very low conduction and switching losses \n• High frequency and/or high pulsed current operation \n• High reverse voltage capability \n• High junction temperature \n• ECOPACK®2 compliant component;

ST

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SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

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EIC

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.3 - 200 Volts PD : 5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

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EIC