Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

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STMICROELECTRONICS

意法半导体

1200 V，5 A超高速二极管

The high-quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics, and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long-term reliability. \n\n Such demanding applications include industri • Ultrafast and soft recovery \n• Very low conduction and switching losses \n• High frequency and/or high pulsed current operation \n• High reverse voltage capability \n• Operating Tj from -55 °C to 175 °C \n• High junction temperature \n• ECOPACK2 compliant \n• Insulated package: TO-220FPAC \n •Ins;

ST

意法半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

文件：125.95 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

5.0 Ampere Surface Mount Single Positive Type Ultra Fast Recovery Rectifier Diode

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power

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THINKISEMI

思祁半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

文件：125.95 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

文件：125.95 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

文件：125.95 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Ultrafast Rectifier

FEATURES ·1200V blocking voltage ·Ultrafast, soft recovery ·Very low conduction and switching losses ·High frequency and/or high pulsed current operation ·High junction temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This pow

文件：343.01 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrafast Rectifier

文件：354.27 Kbytes 页数：2 Pages

ISC

无锡固电

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1.2KV 5A DPAK

STMICROELECTRONICS

意法半导体