Automotive ultrafast recovery diode

Features  Very low conduction losses  Negligible switching losses  Low forward and reverse recovery times  High junction temperature  PPAP capable  AEC-Q101 qualified

文件：449.32 Kbytes 页数：14 Pages

STMICROELECTRONICS

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Automotive ultrafast recovery diode

文件：109.2 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Automotive ultrafast recovery diode

Features  Very low conduction losses  Negligible switching losses  Low forward and reverse recovery times  High junction temperature  PPAP capable  AEC-Q101 qualified

文件：449.32 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

汽车级200 V、3 A Turbo 2超高速二极管

​This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits.\n\n Packaged in SMB, SMC and DPAK, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive appl • Very low conduction losses \n• Negligible switching losses \n• Low forward and reverse recovery times \n• High junction temperature \n• PPAP capable \n• AEC-Q101 qualified;

ST

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