TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

文件：91.28 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

文件：91.28 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

文件：192.06 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

文件：192.06 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

文件：644.45 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体