P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：168.23 Kbytes 页数：7 Pages

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P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：454.65 Kbytes 页数：9 Pages

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N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.88 Kbytes 页数：10 Pages

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Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

RODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 20 4A 75 @ VGS=2.5V 60 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -20V -2.5A 190 @ VGS=-2.5V 138 @ VGS=-4.5V

文件：244.83 Kbytes 页数：11 Pages

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Mosfets

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