Multifunction Telecommunications Switch

DESCRIPTION The STS100 combines two 1 Form A solid state relays and one optocoupler in a 16-pin SOIC package. Its small outline and low height make it ideal for use in PCMCIA applications where multi-function devices help reduce cost and board space. FEATURES • Low input control current • Func

文件：130.43 Kbytes 页数：4 Pages

SSOUSA

Telecom switching

APPLICATIONS • Telecom switching • PCMCIA cards • Fax/modem modules • Set-top boxes • DAA arrangements • Hookswitch • Loop current detect • Pulse dialing FEATURES • Miniature 16pin SOIC package • Function integration (2 relays+1 optocoupler in one package) • High Blocking Voltage (40

文件：596.85 Kbytes 页数：7 Pages

SOLIDSTATE

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

文件：409.48 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：STD10100S；Package：TO-220MF-K1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Trench MOS Schottky technology， High reliability RoHS product

文件：1.05281 Mbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Trench MOS Schottky technology， High reliability RoHS product

文件：1.05281 Mbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：STS10100S；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

文件：409.48 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

文件：409.48 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：STS10100S；Package：SMP-1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

文件：409.48 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

文件：44.73 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

丝印：10K4L；Package：SO-8；P-channel 40 V, 0.0125 廓 typ., 10 A, StripFET??F6 Power MOSFET in SO-8 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

文件：740 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体