抗辐照N沟道100V - 48A MOSFET

The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package.\n\n Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification. In case of discrepancies betw • Fast switching \n• 100% avalanche tested \n• Hermetic package \n• 50 krad \n• SEE radiation hardened;

ST

意法半导体

Rad-Hard 100 V, 48 A N-channel Power MOSFET

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STMICROELECTRONICS

意法半导体

N-channel TO-220 MOSFET

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SEMIPOWER

芯派科技

N-channel TO-220 MOSFET

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SEMIPOWER

芯派科技

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

TMOS E-FET™ Power Field Effect transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for h

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MOTOROLA

摩托罗拉