P-Channel Enhancement Mode Power MOSFET

General Description The u ses advanc ed tren ch technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. STR2P3LLH6 Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON)

文件：755.98 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：2K3L；Package：SOT-23；Very low on-resistance

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

文件：547.07 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Surface Mount Low VF Schottky Barrier Rectifier

Features  Low power loss, high efficiency  High surge current capability  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：327.29 Kbytes 页数：5 Pages

PANJIT

強茂

Low VF Schottky Barrier Rectifier

Features  Low power loss, high efficiency  High surge current capability  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：310.25 Kbytes 页数：5 Pages

PANJIT

強茂

Low VF Schottky Barrier Rectifier

Features  Low power loss, high efficiency  High surge current capability  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：403.74 Kbytes 页数：5 Pages

PANJIT

強茂

Sanken Hybrid IC Voltage Regulator STR30000 Series

文件：151.35 Kbytes 页数：4 Pages

Sanken

三垦

Sanken Hybrid IC Voltage Regulator STR30000 Series

文件：151.35 Kbytes 页数：4 Pages

Sanken

三垦

Sanken Hybrid IC Voltage Regulator STR30000 Series

文件：151.35 Kbytes 页数：4 Pages

Sanken

三垦

Sanken Hybrid IC Voltage Regulator STR30000 Series

文件：151.35 Kbytes 页数：4 Pages

Sanken

三垦

Sanken Hybrid IC Voltage Regulator STR30000 Series

文件：151.35 Kbytes 页数：4 Pages

Sanken

三垦