N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh?줚I MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

文件：116.38 Kbytes 页数：6 Pages

STMICROELECTRONICS

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N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh™II MOSFET

ST

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N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?줚I MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

文件：137.1 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：268.84 Kbytes 页数：9 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.08807 Mbytes 页数：9 Pages

VBSEMI

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N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 7Ω

文件：260.709 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体