STPSC6C065-Y中文资料意法半导体数据手册PDF规格书

厂商型号	STPSC6C065-Y
功能描述	Automotive 650 V power Schottky silicon carbide diode
文件大小	182.38 Kbytes
页面数量	9 页
生产厂商	STMICROELECTRONICS
中文名称	意法半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-14 23:01:00
人工找货	STPSC6C065-Y价格和库存，欢迎联系客服免费人工找货

特性 Features

 AEC-Q101 qualified

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 Dedicated to PFC applications

 High forward surge capability

 PPAP capable

 ECOPACK®2 compliant component

描述 Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature and is ideal for automotive

applications.

Especially suited for use as boost diode, this

rectifier will enhance the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.