STPSC40H12C

Robust high voltage periphery

STPSC40H12CWY

Marking：SC40H12CWY；Package：TO-247；40 A 1200 V power Schottky silicon carbide diode

STPSC40H12C-Y

40 A 1200 V power Schottky silicon carbide diode

STPSC40H12CWL

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 1200V TO247

STPSC40H12CWY

Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：2X20A 1200V POWER SCHOTTKY SILIC

NCE40H12

NCEN-ChannelEnhancementModePowerMOSFET

NCE40H12A

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE40H12Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=120A RDS(ON)

NCE40H12I

NCEN-ChannelEnhancementModePowerMOSFET

NCE40H12K

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NCE40H12K

iscN-ChannelMOSFETTransistor