High voltage power Schottky rectifier

Features • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 compliant component for D²PAK on demand

文件：294.23 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：127.54 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

TO-263

ST

上传：深圳市宏誉半导体有限公司

TO-220

ST

上传：深圳市恒星亚创科技有限公司

TO-220-3

ST

上传：深圳市华康联电子科技有限公司