High voltage power Schottky rectifier

Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPA

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STMICROELECTRONICS

意法半导体

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

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VishayVishay Siliconix

威世科技

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