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9N60

iscN-ChannelMosfetTransistor

DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=8.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleD

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BLV9N60

N-channelEnhancementModePowerMOSFET

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

FB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

FCD9N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD9N60NTM

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCD9N60NTM

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP9N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCP9N60N

N-ChannelMOSFET600V,9A,0.385廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF9N60NT

N-ChannelMOSFET600V,9A,0.385廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF9N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF9N60NT

N-ChannelSupreMOS짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFB9N60

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB9N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB9N60A

Switchmodepowersupply

VishayVishay Siliconix

威世科技

IRFB9N60A

IRPLLNR5WideRangeInputLinearFluorescentBallast

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB9N60A

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFB9N60APBF

HEXFETPowerMOSFET

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowersw

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS9N60A

PowerMOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib

VishayVishay Siliconix

威世科技

IRFS9N60A

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.75Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
ST/意法
TO-220F
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ST
17+
TO220
6200
100%原装正品现货
询价
ST
2017+
TO220
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
STMicroelectronics
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
瑞士意法半导体
报价为准
STN
200
国外订货7-10个工作日
询价
23+
N/A
30050
正品授权货源可靠
询价
三年内
1983
纳立只做原装正品13590203865
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
ST
2020+
TO-220
31270
公司代理品牌,原装现货超低价清仓!
询价
ST
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多STP9N60FP供应商 更新时间2024-5-1 9:30:00