N-CHANNEL 800V - 1.3ohm - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：472.68 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 800V - 1.3ohm - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：472.68 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 1.3廓 - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：419.22 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 1.3廓 - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：419.22 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 1.3廓 - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：419.22 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V - 1.3 Ohm - 6.2 A - TO-220有齐纳管保护的SuperMESH(TM) 功率MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances;

ST

意法半导体

N沟道800 V、1.3 Ohm、6.2 A TO-220FP有齐纳管保护的SuperMESH(TM) 功率MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances;

ST

意法半导体