isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.018Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D짼PAK STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Co

文件：501.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 120V - 0.013ohm - 80A - TO-220 STripFET TM II Power MOSFET

文件：247.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) 175 째C MOSFET

文件：976.11 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced SGT technology

文件：1.61562 Mbytes 页数：4 Pages

DOINGTER

杜因特

isc N-Channel MOSFET Transistor

文件：305.47 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道120V-0.013 OHM-80A TO-220 STripFET II MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applicat • Exceptional dv/dt capability \n• 100% avalanche tested \n• Application oriented characterization;

ST

意法半导体

N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D짼PAK STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Co

文件：501.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 120V - 0.013ohm - 80A - TO-220 STripFET TM II Power MOSFET

文件：247.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体