STP7NM80中文资料N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220 package数据手册ST规格书
STP7NM80规格书详情
描述 Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
特性 Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
技术参数
- 制造商编号
：STP7NM80
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：800
- RDS(on)_max(@ VGS=10V)(Ω)
：1.05
- Drain Current (Dc)_max(A)
：6.5
- PTOT_max(W)
：90
- Qg_typ(nC)
：18
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
Through Hole |
16900 |
原装，正品 |
询价 | ||
ST/意法半导体 |
21+ |
Through Hole |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
Through Hole |
8860 |
只做原装,质量保证 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
23+ |
TO-220 |
2950 |
原厂原装正品 |
询价 | ||
ST/意法半导体 |
24+ |
Through Hole |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
询价 | ||
ST/意法 |
24+ |
TO-220 |
47186 |
郑重承诺只做原装进口现货 |
询价 | ||
ST/意法半导体 |
23+ |
Through Hole |
12820 |
正规渠道,只有原装! |
询价 | ||
ST |
17+ |
TO-220 |
6200 |
询价 |
