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7NM60

7A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC7NM60isahighvoltagesuperjunctionMOSFETandis designedtohavebettercharacteristics. TheUTC7NM60Utilizinganadvancedcharge-balance technology,enhancesystemefficiency,improveEMIandreliability. suchaslowgatecharge,lowon-stateresistanceandhavea

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

STD7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STD7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STL7NM60N

Lowinputcapacitanceandgatecharge,Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP7NM60N

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=5A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=900mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapp

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST
21+
TO220
50000
全新原装正品现货,支持订货
询价
ST
1941
TO220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST
589220
16余年资质 绝对原盒原盘 更多数量
询价
ST/意法
24+
TO220F
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
ST
17+
TO-220
6200
询价
STMicro.
23+
TO-220
7750
全新原装优势
询价
ST
17+
TO-220
15000
原装现货热卖
询价
STMicroelectronics
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
ST
2018+
TO220
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
更多STP7NM60NZ供应商 更新时间2024-6-20 9:00:00