isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.2A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-CHANNEL800V-1.5ohm - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH?줡ower MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series comple

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STMICROELECTRONICS

意法半导体

N-channel 800V - 1.5廓 - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH??Power MOSFET

文件：432.78 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.5 廓, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH??Power MOSFET

文件：943.76 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、1.5 Ohm典型值、5.2 A SuperMESH功率MOSFET，TO-220FP封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.\n\n Such series complem • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalange tested \n• Very good manufacturing repeatibility \n• Very low intrinsic capacitances;

ST

意法半导体