N沟道800 V、1.5 Ohm典型值、5.2 A SuperMESH功率MOSFET，TO-220封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.\n\n Such series complem • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalange tested \n• Very good manufacturing repeatibility \n• Very low intrinsic capacitances;

ST

意法半导体

N沟道800 V、1.5 Ohm典型值、5.2 A SuperMESH功率MOSFET，TO-220FP封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.\n\n Such series complem • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalange tested \n• Very good manufacturing repeatibility \n• Very low intrinsic capacitances;

ST

意法半导体