丝印：7N65M2；Package：TO-220；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

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STMICROELECTRONICS

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N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high eff • Extremely low gate charge\n• Excellent output capacitance (Coss) profile• 100% avalanche tested\n• Zener-protected;

ST

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7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-sta

文件：1.50561 Mbytes 页数：7 Pages

SILAN

士兰微

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-sta

文件：1.50561 Mbytes 页数：7 Pages

SILAN

士兰微

N-Channel 650V (D-S) Super Junction Power MOSFET

文件：1.17284 Mbytes 页数：11 Pages

VBSEMI

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