N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET

Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of a new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest ope

文件：231.1 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel clamped, 7 mOhm, 80 A, TO-220 fully protected MESH Overlay(TM) III Power MOSFET

• Low capacitance and gate charge\n• 175˚C maximum junction temperature• 100% avalanche tested;

ST

意法半导体

N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET

Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of a new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest ope

文件：231.1 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

TO-220

ST/意法

上传：京海半导体(深圳)有限公司

TO-220F

ST/意法

上传：深圳庞田科技有限公司