N沟道钳制5 mOhm典型值、80 A，TO-220封装

This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation • Low capacitance and gate charge \n• 175°C maximum junction temperature \n• 100% avalanche tested;

ST

意法半导体

N-channel clamped 8m廓 - 80A TO-220 Fully protected SAFeFET??Power MOSFET

文件：272.39 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel clamped 9.5 m, 70 A DPAK fully protected SAFeFET Power MOSFET

文件：746.23 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

TO-220-3

STMICROELECTRONICS

意法半导体

上传：深圳市壹芯创科技有限公司

TO-220

ST

上传：深圳市科恒伟业电子有限公司