isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the

文件：255.32 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the

文件：405.83 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：P70NF03L；Package：TO-220；N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

General features ■ Conduction losses reduced ■ Switching losses reduced Description This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance

文件：463.36 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30V - 0.008Ohm - 70A - TO-220 GATE CHARGE StripFET(TM) MOSFET

• Conduction losses reduced• Switching losses reduced;

ST

意法半导体