N-channel 800 V, 1.50(ohm) typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件：723.78 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、1.50 Ohm典型值、4 A MDmesh K5功率MOSFET，TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：904.44 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

文件：820.1 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：313.26 Kbytes 页数：2 Pages

ISC

无锡固电