STP4N150数据手册ST中文资料规格书
STP4N150规格书详情
描述 Description
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
特性 Features
• 100% avalanche tested
• High speed switching
• Intrinsic capacitances and Qg minimized
• Creepage distance path is 5.4 mm (typ.) for TO-3PF
• Fully isolated TO-3PF plastic packages
技术参数
- 制造商编号
：STP4N150
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：1500
- RDS(on)_max(@ VGS=10V)(Ω)
：7
- Drain Current (Dc)_max(A)
：3.1
- PTOT_max(W)
：160
- Qg_typ(nC)
：35
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-220 |
5000 |
原厂原装,价格优势 |
询价 | ||
ST/意法 |
22+ |
SMD |
30000 |
只做原装正品 |
询价 | ||
ST/意法 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ST |
24+ |
TO-220 |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
24+ |
TO-220 |
200 |
只做原装 有挂有货 假一赔十 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
2511 |
TO-220-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
21+ |
TO-220 |
12588 |
原装现货价格优势 |
询价 | |||
ST专家 |
25+23+ |
TO-220 |
29784 |
绝对原装正品全新进口深圳现货 |
询价 |
