Gate charge minimized

文件：626.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.09133 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel 500 V, 2.8 Ohm typ., 2.3 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-220 package

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability\n• ESD improved capability\n• 100% avalanche tested• Gate charge minimized\n• Zener-protected;

ST

意法半导体

N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET

文件：481.89 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体