N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220 package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhancedperformance technology. Thanks to their strip layout and an improved vertical structure,these devices exhibit low on-resistance, optimized switching characteristics with verylow turn-off switching losses, rendering them • Extremely low gate charge\n• Very low turn-off switching losses• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

Very low turn-off switching losses

文件：828.35 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Very low turn-off switching losses

文件：828.35 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 163mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.150 廓 typ., 20 A MDmesh??M2 EP Power MOSFET in TO-220FP package

文件：665.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体