丝印：17N80K5；Package：TO-220；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：739.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.29 Ohm典型值、14 A MDmesh K5功率MOSFET，TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a D²PAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：921.43 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：636.91 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体