N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high eff

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STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.\n • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

N-channel Enhanced mode TO-220F MOSFET

文件：777.67 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

isc N-Channel MOSFET Transistor

文件：432.15 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Voltage Regulators

文件：255.12 Kbytes 页数：10 Pages

TOSHIBA

东芝