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STP14N80K5	文件：725.27 Kbytes Page：14 Pages	N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220 package Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
IXFC14N80P	文件：97.86 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFETISOPLUS220	IXYS IXYS Integrated Circuits Division	IXYS
IXFC14N80P	文件：324.23 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.77Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH14N80	文件：372.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH14N80	文件：100 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N80P	文件：372.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.72Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFQ14N80	文件：312.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFQ14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFT14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFV14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFV14N80PS	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXTH14N80	文件：80.97 Kbytes Page：4 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackage •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Integrated Circuits Division	IXYS
IXTH14N80	文件：372.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=800V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) •100avalanchetested •MinimumLot-to-Lotva	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	STP14N80K5	STMicroelectronics	24+	TO-220	30000	晶体管-分立半导体产品-原装正品	询价
深圳市毅创辉电子科技有限公司	STP14N80K5	ST	23+	NA	30000	15年原装正品企业	询价
中科航电(深圳)半导体技术有限公司	STP14N80K5	STMicroelectronics	2019+	TO-220-3	65500	原装正品货到付款,价格优势!	询价
深圳市科雨电子有限公司	STP14N80K5	STM	1809+	TO-220	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	STP14N80K5		22+	NA	3000	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	STP14N80K5	ST	22+	TO2203	9000	原厂渠道,现货配单	询价
深圳市威雅利发展有限公司	STP14N80K5	ST	19+	TO-220	890	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市鹏顺微电子科技有限公司	STP14N80K5	STMicroelectronics	2022+	TO-220-3	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市世华芯科技有限公司	STP14N80K5	ST	22+	原厂封装	50000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
中科航电（深圳）电子集团有限公司	STP14N80K5	ST		原厂原封	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价

更多STP14N80供应商更新时间2024-5-24 23:07:00

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