N沟道500 V、0.325 Ohm典型值、10 A MDmesh M2功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui • Extremely low gate charge \n• Lower RDS(on)x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

Extremely low gate charge

文件：623.76 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

文件：754.31 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Low gate input resistance

文件：677.76 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体