Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features ■ Very low collector-emitter saturation voltage ■ High current gain characterist

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STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power transistor

文件：100.11 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

低压快速切换PNP功率晶体管

The device is manufactured in PNP planar technology by using a \\\"Base Island\\\" layout. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. • Very low collector-emitter saturation voltage \n• Fast switching speed \n• High current gain characteristic \n• Surface mounting device in medium power SOT-223 package;

ST

意法半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 5A SOT223

STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power transistor

文件：100.11 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体