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STN4NF03L

N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件:260.18 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

STN4NF03L

N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET

Description This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件:228.76 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STN4NF03L

N-channel 30 V - 0.039 廓 - 6.5 A - SOT-223 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件:232.89 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STN4NF03L

N-Channel 30 V (D-S) MOSFET

文件:982.56 Kbytes 页数:8 Pages

VBSEMI

微碧半导体

STN4NF03L_06

N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET

Description This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件:228.76 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STN4NF03L_07

N-channel 30 V - 0.039 廓 - 6.5 A - SOT-223 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件:232.89 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STN4NF03L

N沟道30V - 0.039 Ohm - 4A - SO-223 STripFET(TM) 功率MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufactur • Low threshold drive;

ST

意法半导体

技术参数

  • Package:

    SOT-223

  • Grade:

    Industrial

  • VDSS(V):

    30

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.05

  • Drain Current (Dc)_max(A):

    4

  • PTOT_max(W):

    2.5

  • Qg_typ(nC):

    6.5

供应商型号品牌批号封装库存备注价格
ST/意法
25+
SOT-223
40356
ST/意法全新特价STN4NF03L即刻询购立享优惠#长期有货
询价
ST
23+
SOT223
6996
只做原装正品现货
询价
ST/意法
24+
SOT-223
2000
只做原厂渠道 可追溯货源
询价
STM
12+/21+
4000
SOT-223-3
询价
ST
24+
SOT-223
15800
绝对原装现货,价格低,欢迎询购!
询价
ST/意法半导体
22+
SOT-223-4
6006
原装正品现货 可开增值税发票
询价
STM
23+
SOT-223-4 (TO-261-4)
12000
原装现货支持送检
询价
ST/意法
2021+
SOT-223-4
9000
原装现货,随时欢迎询价
询价
ST
23+
PowerFLAT 5x6
12500
ST系列在售,可接长单
询价
ST(意法半导体)
24+
SOT-223
10613
支持大陆交货,美金交易。原装现货库存。
询价
更多STN4NF03L供应商 更新时间2025-10-5 14:14:00