Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 7.5A 23 @ VGS=10V 35 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -6.0A 35 @ VGS=-10V 55 @ VGS=-4.5V

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Switch-mode Power Rectifier

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Switch-mode Power Rectifier

Features • Ultrafast 35 Nanosecond Recovery Time • Low Forward Voltage Drop • Low Leakage • NRVUD, SURD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Complia

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Power Rectifiers, Ultra-fast Recovery

This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical t

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安森美半导体