Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 6A 35 @ VGS=10V 55 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -4.2A 76 @ VGS=-10V 138 @ VGS=-4.5V

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SAMHOP

三合微科

Mosfets

Samhop

三合微科

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION The UPA833TF has two different built-in transistors for low cost amplifier and oscillator applications up to L and S band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. Thi

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NEC

瑞萨

SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE CAPACITANCE FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance(IR Typically

文件：19.16 Kbytes 页数：2 Pages

ZETEX

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

文件：97.67 Kbytes 页数：6 Pages

ZETEX