Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 7A 25 @ VGS=10V 30 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -6A 35 @ VGS=-10V 52 @ VGS=-4.5V

文件：254.83 Kbytes 页数：11 Pages

SAMHOP

三合微科

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23191 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW

DESCRIPTION The TS831 is an ultra low power integrated circuit incorporating a high stability band-gap voltage reference and a comparator with an open drain output. ■ ULTRA LOW POWER CONSUMPTION : 12µA maximum ■ PRECISION RESET THRESHOLD ■ THRESHOLD VOLTAGE: 4.33V typ. FOR TS831-5

文件：93.07 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

文件：79.45 Kbytes 页数：16 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

文件：79.45 Kbytes 页数：16 Pages

NEC

瑞萨