Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 40V 6.6A 29 @ VGS=10V 45 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -40V -5.5A 42 @ VGS=-10V 65 @ VGS=-4.5V

文件：281.94 Kbytes 页数：11 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 40V 6.6A 45 @ VGS=4.5V 29 @ VGS=10V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -40V -5.8A 60 @ VGS=-4.5V 38 @ VGS=-10V

文件：160.16 Kbytes 页数：11 Pages

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N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23274 Mbytes 页数：14 Pages

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Dual Enhancement Mode Field Effect Transistor(N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

文件：1.032349 Mbytes 页数：11 Pages

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Dual E nhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：935.12 Kbytes 页数：11 Pages

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Dual E nhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：843.85 Kbytes 页数：11 Pages

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Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

文件：1.07467 Mbytes 页数：11 Pages

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Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：1.08593 Mbytes 页数：11 Pages

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Dual E nhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：1.09369 Mbytes 页数：11 Pages

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Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：807.57 Kbytes 页数：11 Pages

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