Dual P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：655.07 Kbytes 页数：7 Pages

SAMHOP

三合微科

Dual P-Channel 30-V (D-S) MOSFET

文件：1.88645 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF495

文件：182.13 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.04 Kbytes 页数：2 Pages

NTE

Memory controller

GENERAL DESCRIPTION The memory controller SAA4952WP is the improved version of the SAA4951WP. The circuit has been designed for high-end TV sets using 2fH technics. For basic feature modules a 1fH mode can be activated. In this situation the controller supplies the system with a line-locked clock

文件：159.15 Kbytes 页数：32 Pages

PHI

PHI