Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：175.67 Kbytes 页数：7 Pages

SAMHOP

三合微科

P-Channel 40 V (D-S) MOSFET

文件：1.024829 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

文件：340.26 Kbytes 页数：1 Pages

HEYCO

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-

文件：194.2 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-

文件：194.2 Kbytes 页数：7 Pages

AOSMD

万国半导体