Automotive-grade N-channel 40 V, 0.82 m typ., 120 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 DSC package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced

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STMICROELECTRONICS

意法半导体

汽车级N沟道40 V、1.27 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6双侧冷却封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness \n• Wettable flank package;

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STM
QFN8

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信盛

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QFN8

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仿真器

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